Samsung M3 78T5663EH3-CF7 2GB vs Corsair CMK64GX4M4K3733C17 16GB

总分

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分

Corsair CMK64GX4M4K3733C17 16GB

Corsair CMK64GX4M4K3733C17 16GB

差异规格评论

差异

Samsung M3 78T5663EH3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 19.4

测试中的平均数值
更快的写入速度，GB/s

2,451.8 15.0

测试中的平均数值

Corsair CMK64GX4M4K3733C17 16GB

需要考虑的原因
Corsair CMK64GX4M4K3733C17 16GB

报告一个错误

低于PassMark测试中的延时，ns

20 65

左右 -225% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663EH3-CF7 2GB

Corsair CMK64GX4M4K3733C17 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 20
读取速度，GB/s

4,605.9 19.4
写入速度，GB/s

2,451.8 15.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

878 3659

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Crucial Technology CT8G4SFS8266.C8FN 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston 99P5474-014.A00LF 4GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

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Apacer Technology AQD-SD4U4GN24-SG 4GB

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AMD AE34G1601U1 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

G Skill Intl F4-3600C19-16GSXF 16GB

G Skill Intl F4-3600C19-16GSXF 16GB

SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

AMD R9S48G3206U2S 8GB

AMD R9S48G3206U2S 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston MSI24D4U7D8MD-16 16GB

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Kingston HP698651-154-MCN 8GB

G Skill Intl F4-2133C15-4GIS 4GB

G Skill Intl F4-2133C15-4GIS 4GB