Samsung M3 78T5663RZ3-CE6 2GB vs Essencore Limited KD4AGSA8A-32N2200 16GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Essencore Limited KD4AGSA8A-32N2200 16GB

Essencore Limited KD4AGSA8A-32N2200 16GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 16.8

测试中的平均数值
更快的写入速度，GB/s

2,168.2 13.6

测试中的平均数值

Essencore Limited KD4AGSA8A-32N2200 16GB

需要考虑的原因
Essencore Limited KD4AGSA8A-32N2200 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 60

左右 -107% 更低的延时
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Essencore Limited KD4AGSA8A-32N2200 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 29
读取速度，GB/s

4,595.2 16.8
写入速度，GB/s

2,168.2 13.6
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

941 3375

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5584-001.A00LF 4GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Crucial Technology BLS8G4D26BFSB.16FE 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Kingston HP32D4S2S1ME-8 8GB