Samsung M3 78T5663RZ3-CE6 2GB vs Mushkin MRA4S320GJJM16G 16GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Mushkin MRA4S320GJJM16G 16GB

Mushkin MRA4S320GJJM16G 16GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 16.7

测试中的平均数值
更快的写入速度，GB/s

2,168.2 14.8

测试中的平均数值

Mushkin MRA4S320GJJM16G 16GB

需要考虑的原因
Mushkin MRA4S320GJJM16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 60

左右 -100% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Mushkin MRA4S320GJJM16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 30
读取速度，GB/s

4,595.2 16.7
写入速度，GB/s

2,168.2 14.8
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

941 3406

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Mushkin MRA4S320GJJM16G 16GB

Mushkin MRA4S320GJJM16G 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

G Skill Intl F4-2800C15-4GVR 4GB

G Skill Intl F4-2800C15-4GVR 4GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Kingston 9905702-400.A00G 8GB

Kingston 9905702-400.A00G 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Team Group Inc. TEAMGROUP-UD4-2933 8GB

Team Group Inc. TEAMGROUP-UD4-2933 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston 99U5702-089.A00G 8GB

Kingston 99U5702-089.A00G 8GB

Kingston 9905402-665.A00LF 4GB

Kingston 9905402-665.A00LF 4GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

G Skill Intl F4-4000C19-8GTZKW 8GB

G Skill Intl F4-4000C19-8GTZKW 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Kingston XVTW4H-MIE 32GB

Kingston XVTW4H-MIE 32GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Heoriady M471A1K43CB1-CTD 8GB

Heoriady M471A1K43CB1-CTD 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-4266C17-16GVKB 16GB

G Skill Intl F4-4266C17-16GVKB 16GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9965600-005.A01G 16GB

Kingston 9965600-005.A01G 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Corsair CM4X4GF2666C16K4 4GB

Corsair CM4X4GF2666C16K4 4GB