RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T5663RZ3-CF7 2GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
比较
Samsung M3 78T5663RZ3-CF7 2GB vs ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
总分
Samsung M3 78T5663RZ3-CF7 2GB
总分
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
更快的读取速度,GB/s
4
11.9
测试中的平均数值
需要考虑的原因
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
65
左右 -171% 更低的延时
更快的写入速度,GB/s
6.3
2,784.6
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
24
读取速度,GB/s
4,806.8
11.9
写入速度,GB/s
2,784.6
6.3
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
932
1218
Samsung M3 78T5663RZ3-CF7 2GB RAM的比较
Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Transcend Information TS2GLH64V4B 16GB
Samsung M3 78T5663RZ3-CF7 2GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMD32GX4M4A2400C12 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Corsair CMD32GX4M4B3466C16 8GB
SK Hynix HYMP125S64CP8-S6 2GB
Team Group Inc. TEAMGROUP-UD4-2800 8GB
Qimonda 72T128420EFA3SB2 1GB
Kingston 9905744-011.A00G 32GB
Kingston 99U5584-001.A00LF 4GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
Samsung M378B5773DH0-CH9 2GB
Samsung M378A1G44AB0-CWE 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Samsung SF4721G4CKHH6DFSDS 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905678-029.A00G 8GB
Kingston 9905584-016.A00LF 4GB
Kingston 9905702-135.A00G 8GB
Kingston KHX1866C9D3/8GX 8GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Corsair CMY8GX3M2A2666C10 4GB
Avant Technology J642GU42J7240N4 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston XF875V-HYA 8GB
报告一个错误
×
Bug description
Source link