Samsung M3 78T5663RZ3-CF7 2GB vs Avant Technology W642GU42J5213N 16GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Avant Technology W642GU42J5213N 16GB

Avant Technology W642GU42J5213N 16GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 18.3

测试中的平均数值
更快的写入速度，GB/s

2,784.6 13.7

测试中的平均数值

Avant Technology W642GU42J5213N 16GB

需要考虑的原因
Avant Technology W642GU42J5213N 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 65

左右 -183% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Avant Technology W642GU42J5213N 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 23
读取速度，GB/s

4,806.8 18.3
写入速度，GB/s

2,784.6 13.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

932 3152

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4DFRA266.C8FB 16GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Avant Technology W642GU42J5213N 16GB

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SK Hynix HMT451U6BFR8A-PB 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston 9905403-038.A00LF 4GB

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Hewlett-Packard 7EH64AA# 8GB

Hewlett-Packard 7EH64AA# 8GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Kingston ACR24D4U7S8MB-8 8GB

Kingston ACR24D4U7S8MB-8 8GB