RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M3 78T6553CZ3-CD5 512MB
Kingston HP32D4U8D8HC-16XR 16GB

Samsung M3 78T6553CZ3-CD5 512MB vs Kingston HP32D4U8D8HC-16XR 16GB

总分
star star star star star
Samsung M3 78T6553CZ3-CD5 512MB

Samsung M3 78T6553CZ3-CD5 512MB

总分
star star star star star
Kingston HP32D4U8D8HC-16XR 16GB

Kingston HP32D4U8D8HC-16XR 16GB

差异 规格 评论

差异

Samsung M3 78T6553CZ3-CD5 512MB 需要考虑的原因
Samsung M3 78T6553CZ3-CD5 512MB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.7
    测试中的平均数值
Kingston HP32D4U8D8HC-16XR 16GB 需要考虑的原因
Kingston HP32D4U8D8HC-16XR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 56
    左右 -100% 更低的延时
  • 更快的写入速度，GB/s
    16.8 left arrow 1,501.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 4200
    左右 6.1 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T6553CZ3-CD5 512MB
Kingston HP32D4U8D8HC-16XR 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 28
  • 读取速度，GB/s
    3,161.0 left arrow 17.7
  • 写入速度，GB/s
    1,501.2 left arrow 16.8
  • 内存带宽，mbps
    4200 left arrow 25600
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    381 left arrow 3811

Samsung M3 78T6553CZ3-CD5 512MB RAM的比较

Kingston KVR800D2N6/2G 2GB
Corsair CM4X4GF2400C14K4 4GB

Kingston HP32D4U8D8HC-16XR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
G Skill Intl F4-3000C15-16GTZ 16GB
G Skill Intl F4-3000C15-16GTZ 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905702-120.A00G 8GB
Kingston 9905702-120.A00G 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Corsair CMW128GX4M8X3600C18 16GB
Corsair CMW128GX4M8X3600C18 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Samsung M391A1K43BB2-CTD 8GB
Samsung M391A1K43BB2-CTD 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C16-8GRS 8GB
G Skill Intl F4-2400C16-8GRS 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
MemxPro Inc. D4S8GHIOFFC 8GB
MemxPro Inc. D4S8GHIOFFC 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
OCMEMORY OCM2933CL16-16GBH 16GB
OCMEMORY OCM2933CL16-16GBH 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905598-039.A00G 16GB
Kingston 9905598-039.A00G 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Corsair CMW64GX4M8C3200C16 8GB
Corsair CMW64GX4M8C3200C16 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Gloway International (HK) STK2133C15-8GB 8GB
Gloway International (HK) STK2133C15-8GB 8GB
内存RAM
G Skill Intl F4-3200C22-16GRS 16GB
G Skill Intl F4-3200C22-16GRS 16GB
Kingston KF548C38-16 16GB
Kingston KF548C38-16 16GB
内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
Wilk Elektronik S.A. IR2400D464L17S/8G 8GB
Wilk Elektronik S.A. IR2400D464L17S/8G 8GB
内存RAM