Samsung M3 91T2953GZ3-CF7 1GB vs SK Hynix HMA451U7MFR8N-TF 4GB

总分

Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

总分

SK Hynix HMA451U7MFR8N-TF 4GB

SK Hynix HMA451U7MFR8N-TF 4GB

差异规格评论

差异

Samsung M3 91T2953GZ3-CF7 1GB

需要考虑的原因
Samsung M3 91T2953GZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 11.1

测试中的平均数值

SK Hynix HMA451U7MFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451U7MFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

32 52

左右 -63% 更低的延时
更快的写入速度，GB/s

9.2 1,906.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 91T2953GZ3-CF7 1GB

SK Hynix HMA451U7MFR8N-TF 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 32
读取速度，GB/s

4,672.4 11.1
写入速度，GB/s

1,906.4 9.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

698 2449

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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TwinMOS 8DHE3MN8-HATP 2GB

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Crucial Technology CT16G4SFRA32A.M16FRS 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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G Skill Intl F4-4000C19-4GVK 4GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Apacer Technology 78.B1GM3.C7W0B 4GB

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Gloway International (HK) STK4U2400D17081C 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Smart Modular SF464128CKHI6DFSEG 4GB

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A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Apacer Technology 78.CAGRN.40C0B 8GB

Apacer Technology 78.CAGRN.40C0B 8GB