Samsung M3 93T5750CZA-CE6 2GB vs Corsair CMK32GX4M4Z3200C16 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Corsair CMK32GX4M4Z3200C16 8GB

Corsair CMK32GX4M4Z3200C16 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16.6

测试中的平均数值
更快的写入速度，GB/s

2,622.0 14.4

测试中的平均数值

Corsair CMK32GX4M4Z3200C16 8GB

需要考虑的原因
Corsair CMK32GX4M4Z3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 77

左右 -126% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMK32GX4M4Z3200C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 34
读取速度，GB/s

3,405.2 16.6
写入速度，GB/s

2,622.0 14.4
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

763 3415

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Crucial Technology CT16G4DFD8266.C16FN 16GB

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AMD AE34G2139U2 4GB

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A-DATA Technology AO1P32NCSV1-BEWS 16GB

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G Skill Intl F4-4133C19-8GTZSWF 8GB

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Kingston KHX1600C9D3/8G 8GB

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Kingston XRMWRN-MIE 16GB

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Kingston 9905704-007.A00G 4GB

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Corsair CMK32GX4M4A2133C15 8GB

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A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology AO1P24HCST2-BSCS 16GB

A-DATA Technology AO1P24HCST2-BSCS 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

SK Hynix HMA81GU6CJR8N-UH 8GB

SK Hynix HMA81GU6CJR8N-UH 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Kingston KHX3200C16D4/4GX 4GB

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Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

Kingston 9905622-025.A00G 4GB

Kingston 9905622-025.A00G 4GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-3600C17-8GTZKW 8GB

G Skill Intl F4-3600C17-8GTZKW 8GB