RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
10
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
报告一个错误
低于PassMark测试中的延时,ns
35
77
左右 -120% 更低的延时
更快的写入速度,GB/s
7.9
2,622.0
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
35
读取速度,GB/s
3,405.2
10.0
写入速度,GB/s
2,622.0
7.9
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
763
2200
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB RAM的比较
Team Group Inc. ZEUS-2133 8GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT102464BF160B.C16 8GB
G Skill Intl F4-3000C16-16GISB 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Apacer Technology 78.DAGQ7.40B0B 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9965600-027.A01G 16GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMR16GX4M2D3000C16 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
Samsung M395T2863QZ4-CF76 1GB
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB
Samsung M378B5173BH0-CH9 4GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
SK Hynix HMT31GR7BFR4C-H9 8GB
Corsair CMR32GX4M4C3600C18 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-3000C16-16GSXWB 16GB
Kingston KHX2133C11D3/4GX 4GB
AMD R748G2400U2S 8GB
Samsung M471A1K43DB1-CWE 8GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
A-DATA Technology DDR4 3200 8GB
Apacer Technology 78.C1GET.9K10C 8GB
Crucial Technology BL16G32C16U4BL.M16FE 16GB
报告一个错误
×
Bug description
Source link