RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
18.1
测试中的平均数值
更快的写入速度,GB/s
2,622.0
13.7
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
77
左右 -196% 更低的延时
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
26
读取速度,GB/s
3,405.2
18.1
写入速度,GB/s
2,622.0
13.7
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
763
3061
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB RAM的比较
Corsair VS1GB800D2 1GB
Corsair CM5S16GM4800A40K2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3200C22-16GRS 16GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9905625-142.A00G 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-4000C18-16GTZR 16GB
Kingston 99U5428-046.A00LF 4GB
Corsair CMK32GX4M4A2133C13 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BLS8G4D26BFSE.16FB 8GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology BL16G36C16U4R.M8FB1 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3200C16-8GRKB 8GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair MK16GX44A2666C16 4GB
Kingston KHX1866C10D3/8GX 8GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Team Group Inc. Team-Elite-2133 4GB
Kingston 9905403-090.A01LF 4GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
Samsung M393A1G40DB0-CPB 8GB
SK Hynix HMA81GU6CJR8N-XN 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
报告一个错误
×
Bug description
Source link