Samsung M3 93T5750CZA-CE6 2GB vs Kingston K6VDX7-MIE 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Kingston K6VDX7-MIE 8GB

Kingston K6VDX7-MIE 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 14.3

测试中的平均数值

Kingston K6VDX7-MIE 8GB

需要考虑的原因
Kingston K6VDX7-MIE 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 77

左右 -114% 更低的延时
更快的写入速度，GB/s

8.1 2,622.0

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Kingston K6VDX7-MIE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 36
读取速度，GB/s

3,405.2 14.3
写入速度，GB/s

2,622.0 8.1
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

763 2332

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology CT4G4DFS824A.C8FE 4GB

Crucial Technology CT4G4DFS824A.C8FE 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

G Skill Intl F4-3200C16-16GTZRX 16GB

G Skill Intl F4-3200C16-16GTZRX 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

G Skill Intl F4-3300C16-16GTZSW 16GB

G Skill Intl F4-3300C16-16GTZSW 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Samsung M386A8K40CM2-CRC 64GB

Samsung M386A8K40CM2-CRC 64GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Corsair CMK32GX4M4B3000C15 8GB

Corsair CMK32GX4M4B3000C15 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-2400C17-16GSXF 16GB

G Skill Intl F4-2400C17-16GSXF 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMW64GX4M4A2666C16 16GB

Corsair CMW64GX4M4A2666C16 16GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Kingston KDK8NX-MIE 16GB

Kingston KDK8NX-MIE 16GB

SK Hynix HMT351S6AFR8C-G7 4GB

SK Hynix HMT351S6AFR8C-G7 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Kingston 9905678-156.A00G 8GB

Kingston 9905678-156.A00G 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Avant Technology W6451U67J7240NB 4GB

Avant Technology W6451U67J7240NB 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB