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Samsung M378A5244CB0-CTD 4GB
V-Color Technology Inc. TL48G26S8KRRGB16 8GB

Samsung M378A5244CB0-CTD 4GB vs V-Color Technology Inc. TL48G26S8KRRGB16 8GB

总分
star star star star star
Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

总分
star star star star star
V-Color Technology Inc. TL48G26S8KRRGB16 8GB

V-Color Technology Inc. TL48G26S8KRRGB16 8GB

差异 规格 评论

差异

Samsung M378A5244CB0-CTD 4GB 需要考虑的原因
Samsung M378A5244CB0-CTD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 59
    左右 39% 更低的延时
  • 更快的写入速度，GB/s
    11.8 left arrow 8.5
    测试中的平均数值
V-Color Technology Inc. TL48G26S8KRRGB16 8GB 需要考虑的原因
V-Color Technology Inc. TL48G26S8KRRGB16 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.7 left arrow 15.8
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A5244CB0-CTD 4GB
V-Color Technology Inc. TL48G26S8KRRGB16 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 59
  • 读取速度，GB/s
    15.8 left arrow 17.7
  • 写入速度，GB/s
    11.8 left arrow 8.5
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2497 left arrow 2225

Samsung M378A5244CB0-CTD 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB

V-Color Technology Inc. TL48G26S8KRRGB16 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
V-Color Technology Inc. TL48G26S8KRRGB16 8GB
V-Color Technology Inc. TL48G26S8KRRGB16 8GB
内存RAM
EVGA 16G-D3-1600-MR 8GB
EVGA 16G-D3-1600-MR 8GB
Crucial Technology CT8G4SFS824A.C8FDR1 8GB
Crucial Technology CT8G4SFS824A.C8FDR1 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-3300C16-16GTZ 16GB
G Skill Intl F4-3300C16-16GTZ 16GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
G Skill Intl F4-3200C14-8GTRS 8GB
G Skill Intl F4-3200C14-8GTRS 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3600C19-16GSXK 16GB
G Skill Intl F4-3600C19-16GSXK 16GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Corsair CMD64GX4M4B3466C16 16GB
Corsair CMD64GX4M4B3466C16 16GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Kingston MSI24D4U7D8MD-16 16GB
Kingston MSI24D4U7D8MD-16 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Essencore Limited KD4AGU880-36A180C 16GB
Essencore Limited KD4AGU880-36A180C 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M378A1K43DB2-CVF 8GB
Samsung M378A1K43DB2-CVF 8GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Smart Modular SMU4TDC3C0K0464SCG 4GB
Smart Modular SMU4TDC3C0K0464SCG 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-8GVK 8GB
G Skill Intl F4-3200C16-8GVK 8GB
内存RAM
ASint Technology SLA302G08-GGNNG 4GB
ASint Technology SLA302G08-GGNNG 4GB
Kingston KHX2400C14S4/4G 4GB
Kingston KHX2400C14S4/4G 4GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
内存RAM