Samsung M378B5173BH0-CH9 4GB vs G Skill Intl F4-4600C19-8GTZSWC 8GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

G Skill Intl F4-4600C19-8GTZSWC 8GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

G Skill Intl F4-4600C19-8GTZSWC 8GB

需要考虑的原因
G Skill Intl F4-4600C19-8GTZSWC 8GB

报告一个错误

低于PassMark测试中的延时，ns

16 23

左右 -44% 更低的延时
更快的读取速度，GB/s

22.3 13.4

测试中的平均数值
更快的写入速度，GB/s

21.2 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 16
读取速度，GB/s

13.4 22.3
写入速度，GB/s

8.0 21.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2269 3952

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Mushkin MES4S213FF16G28 16GB

Mushkin MES4S213FF16G28 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston KHX3000C16D4/32GX 32GB

Kingston KHX3000C16D4/32GX 32GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3600C16-8GTRG 8GB

G Skill Intl F4-3600C16-8GTRG 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

Corsair CMX8GX3M2B1600C9 4GB

Corsair CMX8GX3M2B1600C9 4GB

Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Apacer Technology 78.B1GN3.4032B 4GB

Apacer Technology 78.B1GN3.4032B 4GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB