Samsung M378B5173QH0-CK0 4GB vs Samsung M378B5273CH0-CK0 4GB

总分

Samsung M378B5173QH0-CK0 4GB

Samsung M378B5173QH0-CK0 4GB

总分

Samsung M378B5273CH0-CK0 4GB

Samsung M378B5273CH0-CK0 4GB

差异规格评论

差异

Samsung M378B5173QH0-CK0 4GB

需要考虑的原因
Samsung M378B5173QH0-CK0 4GB

报告一个错误

更快的读取速度，GB/s

13.9 13.1

测试中的平均数值

Samsung M378B5273CH0-CK0 4GB

需要考虑的原因
Samsung M378B5273CH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

41 43

左右 -5% 更低的延时
更快的写入速度，GB/s

8.7 8.2

测试中的平均数值

规格

完整的技术规格清单

Samsung M378B5173QH0-CK0 4GB

Samsung M378B5273CH0-CK0 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

43 41
读取速度，GB/s

13.9 13.1
写入速度，GB/s

8.2 8.7
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2216 2094

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Cortus SAS 8ATF1G64AZ-2G6E1 8GB

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Corsair CMX4GX3M1A1333C9 4GB

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Kingston KHX3466C19D4/16G 16GB

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SK Hynix HYMP112U64CP8-Y5 1GB

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Micron Technology 9905625-004.A03LF 8GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Crucial Technology BL16G36C16U4W.M8FB1 16GB

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AMD R534G1601U1S-UO 4GB

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Kingston 9905734-073.A00G 16GB

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G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Hewlett-Packard 7TE39AA#ABC 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Crucial Technology CT16G4DFRA266.C8FB 16GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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Kingston 9905624-013.A00G 8GB

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Samsung M471B5273CH0-CH9 4GB

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Samsung M378A1K43EB2-CWE 8GB

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Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Kingmax Semiconductor FLFF65F-C8KM9 4GB

Kingmax Semiconductor FLFF65F-C8KM9 4GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

Patriot Memory (PDP Systems) PSD416G320081 16GB