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Samsung M378B5273DH0-CH9 4GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
比较
Samsung M378B5273DH0-CH9 4GB vs Crucial Technology BLS8G4D240FSC.16FBR2 8GB
总分
Samsung M378B5273DH0-CH9 4GB
总分
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5273DH0-CH9 4GB
报告一个错误
需要考虑的原因
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
报告一个错误
低于PassMark测试中的延时,ns
32
41
左右 -28% 更低的延时
更快的读取速度,GB/s
15.8
13.3
测试中的平均数值
更快的写入速度,GB/s
12.2
8.3
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Samsung M378B5273DH0-CH9 4GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
41
32
读取速度,GB/s
13.3
15.8
写入速度,GB/s
8.3
12.2
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2176
2935
Samsung M378B5273DH0-CH9 4GB RAM的比较
G Skill Intl F3-14900CL9-4GBXL 4GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Kingston 9905403-447.A00LF 4GB
Crucial Technology BL16G26C16U4W.16FD 16GB
Samsung M378B5273DH0-CH9 4GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
Samsung M393B1K70CH0-YH9 8GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
Kingston 9905403-156.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N
SK Hynix HMT351S6CFR8C-PB 4GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
Kingston 9905471-006.A01LF 4GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3200C15-8GVK 8GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
KingSpec KingSpec 16GB
Kingston 9905471-076.A00LF 8GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
Samsung M471B5273DH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
Samsung M4 70T2864QZ3-CF7 1GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
报告一个错误
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Bug description
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