Samsung M378B5273DH0-CH9 4GB vs G Skill Intl F4-3600C17-8GTZSW 8GB

总分

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

总分

G Skill Intl F4-3600C17-8GTZSW 8GB

G Skill Intl F4-3600C17-8GTZSW 8GB

差异规格评论

差异

Samsung M378B5273DH0-CH9 4GB

需要考虑的原因
Samsung M378B5273DH0-CH9 4GB

报告一个错误

G Skill Intl F4-3600C17-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-3600C17-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

17 41

左右 -141% 更低的延时
更快的读取速度，GB/s

21.6 13.3

测试中的平均数值
更快的写入速度，GB/s

17.7 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273DH0-CH9 4GB

G Skill Intl F4-3600C17-8GTZSW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 17
读取速度，GB/s

13.3 21.6
写入速度，GB/s

8.3 17.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2176 3702

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Mushkin 991586 2GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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G Skill Intl F4-2800C15-8GVR 8GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

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Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB