Samsung M378B5273EB0-CK0 4GB vs Crucial Technology CT16G4SFD8266.M16FH 16GB

总分

Samsung M378B5273EB0-CK0 4GB

Samsung M378B5273EB0-CK0 4GB

总分

Crucial Technology CT16G4SFD8266.M16FH 16GB

Crucial Technology CT16G4SFD8266.M16FH 16GB

差异规格评论

差异

Samsung M378B5273EB0-CK0 4GB

需要考虑的原因
Samsung M378B5273EB0-CK0 4GB

报告一个错误

Crucial Technology CT16G4SFD8266.M16FH 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8266.M16FH 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 37

左右 -68% 更低的延时
更快的读取速度，GB/s

18.4 14.6

测试中的平均数值
更快的写入速度，GB/s

14.4 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273EB0-CK0 4GB

Crucial Technology CT16G4SFD8266.M16FH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 22
读取速度，GB/s

14.6 18.4
写入速度，GB/s

9.6 14.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2409 3255

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-2400C10-8GTX 8GB

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I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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G Skill Intl F3-1866C8-8GTX 8GB

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SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

G Skill Intl F4-4000C18-8GTZSW 8GB

G Skill Intl F4-4000C18-8GTZSW 8GB