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Samsung M378B5673EH1-CF8 2GB
Chun Well Technology Holding Limited D4U0826190B 8GB
比较
Samsung M378B5673EH1-CF8 2GB vs Chun Well Technology Holding Limited D4U0826190B 8GB
总分
Samsung M378B5673EH1-CF8 2GB
总分
Chun Well Technology Holding Limited D4U0826190B 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
低于PassMark测试中的延时,ns
28
29
左右 3% 更低的延时
需要考虑的原因
Chun Well Technology Holding Limited D4U0826190B 8GB
报告一个错误
更快的读取速度,GB/s
16.7
12.7
测试中的平均数值
更快的写入速度,GB/s
12.9
7.5
测试中的平均数值
更高的内存带宽,mbps
21300
8500
左右 2.51 更高的带宽
规格
完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Chun Well Technology Holding Limited D4U0826190B 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
29
读取速度,GB/s
12.7
16.7
写入速度,GB/s
7.5
12.9
内存带宽,mbps
8500
21300
Other
描述
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1066 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1988
3273
Samsung M378B5673EH1-CF8 2GB RAM的比较
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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报告一个错误
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Bug description
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