Samsung M378B5673EH1-CF8 2GB vs Kingston 99U5624-001.A00G 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Kingston 99U5624-001.A00G 8GB

Kingston 99U5624-001.A00G 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 34

左右 18% 更低的延时

Kingston 99U5624-001.A00G 8GB

需要考虑的原因
Kingston 99U5624-001.A00G 8GB

报告一个错误

更快的读取速度，GB/s

15.8 12.7

测试中的平均数值
更快的写入速度，GB/s

11.6 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Kingston 99U5624-001.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 34
读取速度，GB/s

12.7 15.8
写入速度，GB/s

7.5 11.6
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 2929

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

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Kingston 99U5624-001.A00G 8GB

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V-GEN D4H16GS24A8 16GB

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Crucial Technology CT51264AC800.C16FC 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Kingston HP32D4U2S8ME-16 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BL32G32C16U4WL.M16FB 32GB

Crucial Technology BL32G32C16U4WL.M16FB 32GB

Samsung M378B5673EH1-CF8 2GB

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Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology CT8G4DFS824A.C8FE 8GB

Crucial Technology CT8G4DFS824A.C8FE 8GB