Samsung M378B5773DH0-CH9 2GB vs G Skill Intl F4-2666C15-8GVK 8GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

G Skill Intl F4-2666C15-8GVK 8GB

G Skill Intl F4-2666C15-8GVK 8GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

G Skill Intl F4-2666C15-8GVK 8GB

需要考虑的原因
G Skill Intl F4-2666C15-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 39

左右 -86% 更低的延时
更快的读取速度，GB/s

18.5 11.7

测试中的平均数值
更快的写入速度，GB/s

13.7 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-2666C15-8GVK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 21
读取速度，GB/s

11.7 18.5
写入速度，GB/s

7.2 13.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1749 3202

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 78.BAGMD.AF20B 4GB

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SK Hynix HMT351R7EFR8C-RD 4GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Samsung M393B2G70BH0-CK0 16GB

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Kingston 9905678-041.A00G 4GB

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Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

SK Hynix HMA42GR7AFR4N-TF 16GB

SK Hynix HMA42GR7AFR4N-TF 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

G Skill Intl F4-2400C16-4GRS 4GB

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Kingston 9905403-061.A00LF 2GB

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Corsair CM4X8GF2666C18S2 8GB

Corsair CM4X8GF2666C18S2 8GB