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Samsung M378T5663QZ3-CF7 2GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB

Samsung M378T5663QZ3-CF7 2GB vs Crucial Technology BLS8G4D240FSE.16FBR2 8GB

总分
star star star star star
Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分
star star star star star
Crucial Technology BLS8G4D240FSE.16FBR2 8GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

差异 规格 评论

差异

Samsung M378T5663QZ3-CF7 2GB 需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15
    测试中的平均数值
Crucial Technology BLS8G4D240FSE.16FBR2 8GB 需要考虑的原因
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 56
    左右 -70% 更低的延时
  • 更快的写入速度，GB/s
    11.0 left arrow 1,813.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 33
  • 读取速度，GB/s
    4,387.7 left arrow 15.0
  • 写入速度，GB/s
    1,813.5 left arrow 11.0
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    693 left arrow 2637

Samsung M378T5663QZ3-CF7 2GB RAM的比较

Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-3333C16-8GTZKW 8GB
G Skill Intl F4-3333C16-8GTZKW 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
SK Hynix HMAA4GS6AJR8N-VK 32GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
内存RAM
Apacer Technology 75.A73AA.G03 2GB
Apacer Technology 75.A73AA.G03 2GB
Corsair CMK32GX4M4C3000C16 8GB
Corsair CMK32GX4M4C3000C16 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Avant Technology W641GU42J7240NB 8GB
Avant Technology W641GU42J7240NB 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-2800C15-8GRK 8GB
G Skill Intl F4-2800C15-8GRK 8GB
内存RAM
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A-DATA Technology DOVF1B163G2G 2GB
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Samsung V-GeN D4S4GL32A8TL 4GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Samsung M378A2G43AB3-CWE 16GB
Samsung M378A2G43AB3-CWE 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2133C15-8GIS 8GB
G Skill Intl F4-2133C15-8GIS 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMU64GX4M4C3200C16 16GB
Corsair CMU64GX4M4C3200C16 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Apacer Technology 78.CAGP7.DFW0C 8GB
Apacer Technology 78.CAGP7.DFW0C 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
内存RAM