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Samsung M378T5663QZ3-CF7 2GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB

Samsung M378T5663QZ3-CF7 2GB vs Micron Technology 72ASS8G72LZ-2G6D2 64GB

总分
star star star star star
Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分
star star star star star
Micron Technology 72ASS8G72LZ-2G6D2 64GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

差异 规格 评论

差异

Samsung M378T5663QZ3-CF7 2GB 需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB
报告一个错误
Micron Technology 72ASS8G72LZ-2G6D2 64GB 需要考虑的原因
Micron Technology 72ASS8G72LZ-2G6D2 64GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 56
    左右 -47% 更低的延时
  • 更快的读取速度，GB/s
    8.7 left arrow 4
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.0 left arrow 1,813.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M378T5663QZ3-CF7 2GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 38
  • 读取速度，GB/s
    4,387.7 left arrow 8.7
  • 写入速度，GB/s
    1,813.5 left arrow 7.0
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    693 left arrow 1999

Samsung M378T5663QZ3-CF7 2GB RAM的比较

Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Gloway International (HK) STK4U2400D17081C 8GB
Gloway International (HK) STK4U2400D17081C 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BL8G24C16U4B.8FB 8GB
Crucial Technology BL8G24C16U4B.8FB 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Super Talent F24UB16GV 16GB
Super Talent F24UB16GV 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS8G4D240FSB.16FADG 8GB
Crucial Technology BLS8G4D240FSB.16FADG 8GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
G Skill Intl F4-3400C16-16GVR 16GB
G Skill Intl F4-3400C16-16GVR 16GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMSX32GX4M2A2933C19 16GB
Corsair CMSX32GX4M2A2933C19 16GB
内存RAM
G Skill Intl F4-4500C19-8GTZKKE 8GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
Corsair CMK16GX4M2B3200C16 8GB
Corsair CMK16GX4M2B3200C16 8GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Corsair CM4B16G1J2400A16K2-O 16GB
Corsair CM4B16G1J2400A16K2-O 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C18-32GVK 32GB
G Skill Intl F4-4000C18-32GVK 32GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Samsung 9905599-020.A00G 16GB
Samsung 9905599-020.A00G 16GB
内存RAM