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Samsung M378T5663QZ3-CF7 2GB
Wilk Elektronik S.A. GR2666S464L19/16G 16GB
比较
Samsung M378T5663QZ3-CF7 2GB vs Wilk Elektronik S.A. GR2666S464L19/16G 16GB
总分
Samsung M378T5663QZ3-CF7 2GB
总分
Wilk Elektronik S.A. GR2666S464L19/16G 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB
报告一个错误
更快的读取速度,GB/s
4
15.8
测试中的平均数值
需要考虑的原因
Wilk Elektronik S.A. GR2666S464L19/16G 16GB
报告一个错误
低于PassMark测试中的延时,ns
40
56
左右 -40% 更低的延时
更快的写入速度,GB/s
13.7
1,813.5
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Samsung M378T5663QZ3-CF7 2GB
Wilk Elektronik S.A. GR2666S464L19/16G 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
56
40
读取速度,GB/s
4,387.7
15.8
写入速度,GB/s
1,813.5
13.7
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
693
2959
Samsung M378T5663QZ3-CF7 2GB RAM的比较
Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB
Wilk Elektronik S.A. GR2666S464L19/16G 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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G Skill Intl F4-3000C14-16GVRD 16GB
Crucial Technology CT102464BF160B-16F 8GB
King Tiger Technology TMKG8G3000C17(XMP) 8GB
Samsung M378T5663QZ3-CF7 2GB
Wilk Elektronik S.A. GR2666S464L19/16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
Kingston 9965525-144.A00LF 8GB
Patriot Memory (PDP Systems) PSD44G213381 4GB
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Smart Modular SG564568FG8N6KF-Z2 2GB
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PUSKILL DDR3 1600 8G 8GB
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Smart Modular SF564128CJ8N6NNSEG 4GB
Corsair CMSX16GX4M2A2400C16 8GB
Mushkin 991988 (996988) 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
报告一个错误
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