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Samsung M386B4G70DM0-CMA4 32GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
比较
Samsung M386B4G70DM0-CMA4 32GB vs Micron Technology 18ADF2G72PZ-2G3B1 16GB
总分
Samsung M386B4G70DM0-CMA4 32GB
总分
Micron Technology 18ADF2G72PZ-2G3B1 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB
报告一个错误
需要考虑的原因
Micron Technology 18ADF2G72PZ-2G3B1 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
52
左右 -63% 更低的延时
更快的读取速度,GB/s
11.8
9.7
测试中的平均数值
更快的写入速度,GB/s
8.7
7.2
测试中的平均数值
更高的内存带宽,mbps
19200
14900
左右 1.29 更高的带宽
规格
完整的技术规格清单
Samsung M386B4G70DM0-CMA4 32GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
52
32
读取速度,GB/s
9.7
11.8
写入速度,GB/s
7.2
8.7
内存带宽,mbps
14900
19200
Other
描述
PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-10-9-28 / 1866 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2173
2585
Samsung M386B4G70DM0-CMA4 32GB RAM的比较
Team Group Inc. Dark-1866 4GB
Mushkin 994104 8GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CM5S16GM4800A40K2 16GB
Corsair CMK32GX5M2B5200C40 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
Kingston 99U5428-018.A00LF 8GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
Kingston KP223C-ELD 2GB
Corsair CMWX8GD3200C16W2E 8GB
Kingston 99U5403-492.A00LF 8GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
Kingston 9905403-156.A00LF 2GB
Corsair CM4X8GE2400C15K4 8GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMK128GX4M8A2400C14 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3333C16-4GRRD 4GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BL16G36C16U4B.M8FB1 16GB
SK Hynix HMT151R7TFR4C-H9 4GB
A-DATA Technology AM1P24HC8T1-BBJS 8GB
报告一个错误
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Bug description
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