Samsung M391A2K43BB1-CTD 16GB vs Crucial Technology CT16G4SFRA32A.C16FJ 16GB

总分

Samsung M391A2K43BB1-CTD 16GB

Samsung M391A2K43BB1-CTD 16GB

总分

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

差异规格评论

差异

Samsung M391A2K43BB1-CTD 16GB

需要考虑的原因
Samsung M391A2K43BB1-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 42

左右 43% 更低的延时
更快的读取速度，GB/s

16.8 15.2

测试中的平均数值
更快的写入速度，GB/s

14.9 9.5

测试中的平均数值

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

需要考虑的原因
Crucial Technology CT16G4SFRA32A.C16FJ 16GB

报告一个错误

更高的内存带宽，mbps

25600 21300

左右 1.2 更高的带宽

规格

完整的技术规格清单

Samsung M391A2K43BB1-CTD 16GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 42
读取速度，GB/s

16.8 15.2
写入速度，GB/s

14.9 9.5
内存带宽，mbps

21300 25600

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3167 2597

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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SK Hynix MMA82GS6CJR8N-VK 16GB

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Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

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Micron Technology 16ATF2G64HZ-2G1B1 16GB

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Kingston KVR16N11/8-SP 8GB

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Crucial Technology CT8G4SFD824A.C16FDD2 8GB

Crucial Technology CT8G4SFD824A.C16FDD2 8GB

Hexon Technology Pte Ltd HEXON 1GB

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Kingston 99U5624-003.A00G 8GB

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PUSKILL DDR3 1600 8G 8GB

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Corsair CM4B8G4J2400A16K2-ON 8GB

Corsair CM4B8G4J2400A16K2-ON 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

SK Hynix GKE800UD102408-2133 8GB

SK Hynix GKE800UD102408-2133 8GB