Samsung M391B5673EH1-CH9 2GB vs Crucial Technology CT16G4SFD824A.M16FB 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Crucial Technology CT16G4SFD824A.M16FB 16GB

Crucial Technology CT16G4SFD824A.M16FB 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 38

左右 32% 更低的延时

Crucial Technology CT16G4SFD824A.M16FB 16GB

需要考虑的原因
Crucial Technology CT16G4SFD824A.M16FB 16GB

报告一个错误

更快的读取速度，GB/s

14.8 12.8

测试中的平均数值
更快的写入速度，GB/s

10.9 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Crucial Technology CT16G4SFD824A.M16FB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 38
读取速度，GB/s

12.8 14.8
写入速度，GB/s

9.0 10.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 2536

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CML8GX3M2A1600C9 4GB

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G Skill Intl F4-3600C16-16GTRS 16GB

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Corsair CMWX8GD3600C18W2D 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT41GU6AFR8C-PB 8GB

SK Hynix HMT41GU6AFR8C-PB 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CM4X16GC3000C16K8 16GB

Corsair CM4X16GC3000C16K8 16GB

Kingston 99U5315-023.A00LF 512MB

Kingston 99U5315-023.A00LF 512MB

Apacer Technology 78.CAGNT.AR40B 8GB

Apacer Technology 78.CAGNT.AR40B 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Mushkin 99[2/7/4]189F 4GB

Mushkin 99[2/7/4]189F 4GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Kingston 9965600-011.A01G 16GB

Kingston 9965600-011.A01G 16GB