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Samsung M391B5673FH0-CH9 2GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB

Samsung M391B5673FH0-CH9 2GB vs Crucial Technology CT16G4DFD8266.C16FJ 16GB

总分
star star star star star
Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分
star star star star star
Crucial Technology CT16G4DFD8266.C16FJ 16GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

差异 规格 评论

差异

Samsung M391B5673FH0-CH9 2GB 需要考虑的原因
Samsung M391B5673FH0-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 35
    左右 20% 更低的延时
Crucial Technology CT16G4DFD8266.C16FJ 16GB 需要考虑的原因
Crucial Technology CT16G4DFD8266.C16FJ 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673FH0-CH9 2GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 35
  • 读取速度，GB/s
    13.3 left arrow 15.6
  • 写入速度，GB/s
    8.5 left arrow 12.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2213 left arrow 3060

Samsung M391B5673FH0-CH9 2GB RAM的比较

Samsung M391B5673EH1-CH9 2GB
Samsung M378B5673FH0-CH9 2GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB RAM的比较

Samsung M393B5170FH0-CK0 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology CT51264AC800.C16FC 4GB
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内存RAM
Samsung M391B5673FH0-CH9 2GB
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Crucial Technology CT16G4DFD8266.C16FJ 16GB
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内存RAM
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Kingston K1N7HK-ELC 2GB
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Kingston ACR256X64D3S1333C9 2GB
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SK Hynix HMA41GR7AFR4N-TF 8GB
内存RAM
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
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Crucial Technology CT16G4SFRA32A.C16FJ 16GB
内存RAM
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Elpida EBJ81UG8BBU0-GN-F 8GB
Apacer Technology AQD-SD4U4GN24-SG 4GB
Apacer Technology AQD-SD4U4GN24-SG 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
内存RAM
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Samsung M393B1G70BH0-CK0 8GB
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G Skill Intl F4-4000C15-8GTRS 8GB
内存RAM
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ASint Technology SSA302G08-EGN1C 4GB
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G Skill Intl F4-3600C16-8GTZN 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
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