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Samsung M391B5673FH0-CH9 2GB
G Skill Intl F4-3866C18-8GTZSW 8GB

Samsung M391B5673FH0-CH9 2GB vs G Skill Intl F4-3866C18-8GTZSW 8GB

总分
star star star star star
Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分
star star star star star
G Skill Intl F4-3866C18-8GTZSW 8GB

G Skill Intl F4-3866C18-8GTZSW 8GB

差异 规格 评论

差异

Samsung M391B5673FH0-CH9 2GB 需要考虑的原因
Samsung M391B5673FH0-CH9 2GB
报告一个错误
G Skill Intl F4-3866C18-8GTZSW 8GB 需要考虑的原因
G Skill Intl F4-3866C18-8GTZSW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 28
    左右 -56% 更低的延时
  • 更快的读取速度，GB/s
    20.9 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.0 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673FH0-CH9 2GB
G Skill Intl F4-3866C18-8GTZSW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 18
  • 读取速度，GB/s
    13.3 left arrow 20.9
  • 写入速度，GB/s
    8.5 left arrow 17.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2213 left arrow 3668

Samsung M391B5673FH0-CH9 2GB RAM的比较

Samsung M391B5673EH1-CH9 2GB
Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-3866C18-8GTZSW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 9965525-155.A00LF 8GB
V-Color Technology Inc. TN48G24S817-VHA/R 8GB
V-Color Technology Inc. TN48G24S817-VHA/R 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Corsair CMWX8GD3600C18W2D 8GB
Corsair CMWX8GD3600C18W2D 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMK8GX4M1D2666C16 8GB
Corsair CMK8GX4M1D2666C16 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
V-Color Technology Inc. TC48G24S817 8GB
V-Color Technology Inc. TC48G24S817 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KHX2133C13S4/4G 4GB
Kingston KHX2133C13S4/4G 4GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
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A-DATA Technology AO2P21FC8R2-BRGS 8GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Corsair CMR16GX4M2C3200C16 8GB
Corsair CMR16GX4M2C3200C16 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMWX16GC3200C16W4 16GB
Corsair CMWX16GC3200C16W4 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-2400C14-16GVK 16GB
G Skill Intl F4-2400C14-16GVK 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMT32GX4M4C3200C14 8GB
Corsair CMT32GX4M4C3200C14 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Apacer Technology 78.C2GF6.AU20B 8GB
Apacer Technology 78.C2GF6.AU20B 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Corsair CMR16GX4M2A2666C16 8GB
Corsair CMR16GX4M2A2666C16 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
SK Hynix GKE160UD102408-2400 16GB
SK Hynix GKE160UD102408-2400 16GB
内存RAM