Samsung M393B1G70BH0-YK0 8GB vs Corsair CMWB8G1L2666A16W4 8GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Corsair CMWB8G1L2666A16W4 8GB

Corsair CMWB8G1L2666A16W4 8GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Corsair CMWB8G1L2666A16W4 8GB

需要考虑的原因
Corsair CMWB8G1L2666A16W4 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 49

左右 -123% 更低的延时
更快的读取速度，GB/s

17.8 10.2

测试中的平均数值
更快的写入速度，GB/s

13.4 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Corsair CMWB8G1L2666A16W4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 22
读取速度，GB/s

10.2 17.8
写入速度，GB/s

8.1 13.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2465 3036

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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AMD AE34G1601U1 4GB

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ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

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Corsair CMX4GX3M2A1600C9 2GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Corsair CMT64GX4M4C3466C16 16GB

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Samsung M471B5673FH0-CF8 2GB

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Kingston 9965643-006.A01G 8GB

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Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Kingston KHX2400C1C14/16G 16GB

Kingston KHX2400C1C14/16G 16GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Kingston XG9XKG-MIE 16GB

Kingston XG9XKG-MIE 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Corsair CMV4GX4M1A2400C16 4GB

Corsair CMV4GX4M1A2400C16 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMA81GS6AFR8N-UH 8GB

SK Hynix HMA81GS6AFR8N-UH 8GB