Samsung M393B1K70CH0-CH9 8GB vs Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

需要考虑的原因
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 44

左右 -42% 更低的延时
更快的读取速度，GB/s

13.5 11.2

测试中的平均数值
更快的写入速度，GB/s

10.6 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 31
读取速度，GB/s

11.2 13.5
写入速度，GB/s

8.1 10.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2293 2330

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-447.A00LF 4GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Kingston KHX3000C16D4/16GX 16GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Samsung M471B5173DB0-YK0 4GB

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A-DATA Technology AO2P26KC8T1-BPYS 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Golden Empire CL15-17-17 D4-3200 8GB

Golden Empire CL15-17-17 D4-3200 8GB

Crucial Technology CT51264BD160B.C16F 4GB

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Corsair CMD16GX4M4B3200C16-R 4GB

Corsair CMD16GX4M4B3200C16-R 4GB