Samsung M393B1K70CH0-YH9 8GB vs Micron Technology 8ATF1G64AZ-2G3H1R 8GB

总分

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

差异规格评论

差异

Samsung M393B1K70CH0-YH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB

报告一个错误

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G3H1R 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 49

左右 -29% 更低的延时
更快的读取速度，GB/s

15.3 10.1

测试中的平均数值
更快的写入速度，GB/s

10.5 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-YH9 8GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 38
读取速度，GB/s

10.1 15.3
写入速度，GB/s

7.8 10.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2070 2346

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-061.A00LF 2GB

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Corsair CMZ16GX3M2A1866C9 8GB

G Skill Intl F4-4000C18-16GTZR 16GB

G Skill Intl F4-4000C18-16GTZR 16GB