Samsung M393B1K70QB0-CK0 8GB vs EVGA 16G-D4-2400-MR 8GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

EVGA 16G-D4-2400-MR 8GB

EVGA 16G-D4-2400-MR 8GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

EVGA 16G-D4-2400-MR 8GB

需要考虑的原因
EVGA 16G-D4-2400-MR 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 47

左右 -57% 更低的延时
更快的读取速度，GB/s

17.9 10.4

测试中的平均数值
更快的写入速度，GB/s

13.3 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

EVGA 16G-D4-2400-MR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 30
读取速度，GB/s

10.4 17.9
写入速度，GB/s

7.8 13.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2169 3226

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CML8GX3M2A1600C9 4GB

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Crucial Technology CT102464BF160B-16F 8GB

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Crucial Technology BLS8G3N18AES4.16FE 8GB

SK Hynix GKE800UD102408-2133 8GB

SK Hynix GKE800UD102408-2133 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Golden Empire CL16-16-16 D4-3000 4GB

Golden Empire CL16-16-16 D4-3000 4GB

Kingston 9905471-002.A00LF 2GB

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Kingston 9905678-042.A00G 8GB

Kingston 9905678-042.A00G 8GB

Samsung M393B1K70QB0-CK0 8GB

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G Skill Intl F4-3200C16-8GSXWB 8GB