Samsung M393B1K70QB0-CK0 8GB vs G Skill Intl F4-3400C16-16GTZ 16GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

G Skill Intl F4-3400C16-16GTZ 16GB

G Skill Intl F4-3400C16-16GTZ 16GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

G Skill Intl F4-3400C16-16GTZ 16GB

需要考虑的原因
G Skill Intl F4-3400C16-16GTZ 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 47

左右 -114% 更低的延时
更快的读取速度，GB/s

17.9 10.4

测试中的平均数值
更快的写入速度，GB/s

13.8 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

G Skill Intl F4-3400C16-16GTZ 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 22
读取速度，GB/s

10.4 17.9
写入速度，GB/s

7.8 13.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2169 3297

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Apacer Technology 78.CAGP7.AZ20B 8GB

Apacer Technology 78.CAGP7.AZ20B 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Team Group Inc. TEAMGROUP-UD4-4500 8GB

Team Group Inc. TEAMGROUP-UD4-4500 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CM4X8GD3600C18K2D 8GB

Corsair CM4X8GD3600C18K2D 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston 9905624-010.A00G 4GB

Kingston 9905624-010.A00G 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Apacer Technology 78.B1GM3.C7W0B 4GB

Apacer Technology 78.B1GM3.C7W0B 4GB

G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F3-1600C11-4GIS 4GB

SK Hynix HMA81GU6MFR8N-UH 8GB

SK Hynix HMA81GU6MFR8N-UH 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Kingston KHX2666C15/16GX 16GB

Kingston KHX2666C15/16GX 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-3200C16-16GVK 16GB

G Skill Intl F4-3200C16-16GVK 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

G Skill Intl F4-3600C19-8GSXF 8GB

G Skill Intl F4-3600C19-8GSXF 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2666C19-8GVK 8GB

G Skill Intl F4-2666C19-8GVK 8GB