RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1K70QB0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
比较
Samsung M393B1K70QB0-CK0 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
总分
Samsung M393B1K70QB0-CK0 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
47
左右 -68% 更低的延时
更快的读取速度,GB/s
16.2
10.4
测试中的平均数值
更快的写入速度,GB/s
12.7
7.8
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung M393B1K70QB0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
47
28
读取速度,GB/s
10.4
16.2
写入速度,GB/s
7.8
12.7
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2169
2417
Samsung M393B1K70QB0-CK0 8GB RAM的比较
V-Color Technology Inc. TD8G16C10-OC18AK 8GB
Kingston 9905430-400.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB RAM的比较
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT51264BF160BJ.M8F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264AC800.C16FC 4GB
Kingston 9905744-024.A00G 16GB
AMD R5S38G1601U2S 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
AMD R534G1601U1S-UO 4GB
Kingston HX424C15FB/16 16GB
Samsung M378B5173BH0-CH9 4GB
Kingston KHX2666C16/16G 16GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Kingston KY7N41-MIE 8GB
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMU32GX4M4C3200C16 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Kingston 9905403-061.A00LF 2GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
AMD R5316G1609U2K 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
A-DATA Technology VDQVE1B16 2GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Samsung M378B5773DH0-CH9 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
报告一个错误
×
Bug description
Source link