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Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3200C18-16GRS 16GB

Samsung M393B2G70BH0-CH9 16GB vs G Skill Intl F4-3200C18-16GRS 16GB

总分
star star star star star
Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分
star star star star star
G Skill Intl F4-3200C18-16GRS 16GB

G Skill Intl F4-3200C18-16GRS 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CH9 16GB 需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 40
    左右 18% 更低的延时
G Skill Intl F4-3200C18-16GRS 16GB 需要考虑的原因
G Skill Intl F4-3200C18-16GRS 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16 left arrow 8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.0 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3200C18-16GRS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 40
  • 读取速度，GB/s
    8.0 left arrow 16.0
  • 写入速度，GB/s
    7.3 left arrow 14.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1911 left arrow 2965

Samsung M393B2G70BH0-CH9 16GB RAM的比较

Samsung M393B1K70BH1-CH9 8GB
Essencore Limited KD48GU880-34A170X 8GB

G Skill Intl F4-3200C18-16GRS 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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Samsung M471A1K43CB1-CRC 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
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Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Corsair CMW32GX4M4Z2933C16 8GB
Corsair CMW32GX4M4Z2933C16 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-2400C17-8GDBVR 8GB
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内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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Crucial Technology CT4G4DFS8213.C8FBD2 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
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Tanbassh 8G 2666MHZ 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Kingston 9965662-002.A01G 16GB
Kingston 9965662-002.A01G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C14-8GTRS 8GB
G Skill Intl F4-3200C14-8GTRS 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Kingston KHX2666C13/16GX 16GB
Kingston KHX2666C13/16GX 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
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Crucial Technology CT8G4SFS8213.C8FBR1 8GB
内存RAM
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Corsair CMD32GX4M4B3000C15 8GB
内存RAM
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Samsung M391B5673EH1-CH9 2GB
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G Skill Intl F4-3600C18-32GVK 32GB
内存RAM