Samsung M393B2G70BH0-CH9 16GB vs Wilk Elektronik S.A. GR2133S464L15/8G 8GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Wilk Elektronik S.A. GR2133S464L15/8G 8GB

Wilk Elektronik S.A. GR2133S464L15/8G 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 36

左右 8% 更低的延时

Wilk Elektronik S.A. GR2133S464L15/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. GR2133S464L15/8G 8GB

报告一个错误

更快的读取速度，GB/s

14.8 8

测试中的平均数值
更快的写入速度，GB/s

11.5 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Wilk Elektronik S.A. GR2133S464L15/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 36
读取速度，GB/s

8.0 14.8
写入速度，GB/s

7.3 11.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1911 2564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Wilk Elektronik S.A. GR2133S464L15/8G 8GB

Wilk Elektronik S.A. GR2133S464L15/8G 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Gloway International Co. Ltd. YCT4S2666D19081C 8GB

Gloway International Co. Ltd. YCT4S2666D19081C 8GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Samsung M471A4G43BB1-CWE 32GB

Samsung M471A4G43BB1-CWE 32GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

PUSKILL PJ16TFK1GM8 16GB

PUSKILL PJ16TFK1GM8 16GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Corsair CMK16GX4M2K4266C19 8GB

Corsair CMK16GX4M2K4266C19 8GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Corsair CMU64GX4M4C3200C16 16GB

Corsair CMU64GX4M4C3200C16 16GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Micron Technology M471A1K43CB1-CTD 8GB

Micron Technology M471A1K43CB1-CTD 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Samsung M378A4G43MB1-CTD 32GB

Samsung M378A4G43MB1-CTD 32GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Netac Technology Co Ltd EKBLACK4083016A 8GB

Netac Technology Co Ltd EKBLACK4083016A 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Gloway International (HK) STK4U2400D17041C 4GB

Gloway International (HK) STK4U2400D17041C 4GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CM4X8GF2133C13K4 8GB

Corsair CM4X8GF2133C13K4 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9905599-010.A00G 4GB

Kingston 9905599-010.A00G 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3866C18-8GTZ 8GB

G Skill Intl F4-3866C18-8GTZ 8GB