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Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3000C15-16GVR 16GB

Samsung M393B2G70BH0-CK0 16GB vs G Skill Intl F4-3000C15-16GVR 16GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
G Skill Intl F4-3000C15-16GVR 16GB

G Skill Intl F4-3000C15-16GVR 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
G Skill Intl F4-3000C15-16GVR 16GB 需要考虑的原因
G Skill Intl F4-3000C15-16GVR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 54
    左右 -80% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.2 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3000C15-16GVR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 30
  • 读取速度，GB/s
    9.2 left arrow 17.5
  • 写入速度，GB/s
    8.1 left arrow 14.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 3520

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

G Skill Intl F4-3000C15-16GVR 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3000C15-16GVR 16GB
G Skill Intl F4-3000C15-16GVR 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BL8G30C15U4WL.M8FE1 8GB
Crucial Technology BL8G30C15U4WL.M8FE1 8GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Essencore Limited KD4AGU880-32A160X 16GB
Essencore Limited KD4AGU880-32A160X 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston 9905665-021.A00G 4GB
Kingston 9905665-021.A00G 4GB
内存RAM
Elpida EBJ21UE8BDS0-DJ-F 2GB
Elpida EBJ21UE8BDS0-DJ-F 2GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
SK Hynix HMA84GR7MFR4N-TF 32GB
SK Hynix HMA84GR7MFR4N-TF 32GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston MSI24D4U7D8MD-16 16GB
Kingston MSI24D4U7D8MD-16 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT8G4DFS824A.M8FGM 8GB
Crucial Technology CT8G4DFS824A.M8FGM 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Samsung SH5724G4UNC26P2-SC 32GB
Samsung SH5724G4UNC26P2-SC 32GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMU32GX4M4C3466C16 8GB
Corsair CMU32GX4M4C3466C16 8GB
内存RAM
Ramaxel Technology RMT3010EC58E8F1333 2GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Kingston HP26D4S9S8MH-8 8GB
Kingston HP26D4S9S8MH-8 8GB
内存RAM