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Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3466C16-16GTZR 16GB

Samsung M393B2G70BH0-CK0 16GB vs G Skill Intl F4-3466C16-16GTZR 16GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
G Skill Intl F4-3466C16-16GTZR 16GB

G Skill Intl F4-3466C16-16GTZR 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
G Skill Intl F4-3466C16-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-3466C16-16GTZR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 54
    左右 -184% 更低的延时
  • 更快的读取速度，GB/s
    20.7 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.4 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3466C16-16GTZR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 19
  • 读取速度，GB/s
    9.2 left arrow 20.7
  • 写入速度，GB/s
    8.1 left arrow 16.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 3724

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

G Skill Intl F4-3466C16-16GTZR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3600C18-32GTRS 32GB
G Skill Intl F4-3600C18-32GTRS 32GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3466C16-16GTZR 16GB
G Skill Intl F4-3466C16-16GTZR 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
V-GEN D4H8GS24A8 8GB
V-GEN D4H8GS24A8 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
SK Hynix HMA84GR7JJR4N-VK 32GB
SK Hynix HMA84GR7JJR4N-VK 32GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston HP24D4U7S8MD-8 8GB
Kingston HP24D4U7S8MD-8 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston KHX3200C18D4/4G 4GB
Kingston KHX3200C18D4/4G 4GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Apacer Technology GD2.1140CH.001 4GB
Apacer Technology GD2.1140CH.001 4GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Corsair CMD8GX4M2B3600C18 4GB
Corsair CMD8GX4M2B3600C18 4GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Apacer Technology 78.CAGNK.4040B 8GB
Apacer Technology 78.CAGNK.4040B 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-3000C15-4GVR 4GB
G Skill Intl F4-3000C15-4GVR 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Wilk Elektronik S.A. IR2400D464L15S/8G 8GB
Wilk Elektronik S.A. IR2400D464L15S/8G 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Mushkin MRA4S300GJJM16G 16GB
Mushkin MRA4S300GJJM16G 16GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
G Skill Intl F4-3200C16-16GTRG 16GB
G Skill Intl F4-3200C16-16GTRG 16GB
内存RAM