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Samsung M393B2G70BH0-CK0 16GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

Samsung M393B2G70BH0-CK0 16GB vs SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB 需要考虑的原因
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 54
    左右 -125% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 24
  • 读取速度，GB/s
    9.2 left arrow 15.4
  • 写入速度，GB/s
    8.1 left arrow 10.6
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 2462

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9905668-001.A00G 8GB
Kingston 9905668-001.A00G 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Kingston 9905664-010.A00G 4GB
Kingston 9905664-010.A00G 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 9ASF1G72PZ-2G3B1 8GB
Micron Technology 9ASF1G72PZ-2G3B1 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston 9965596-019.B01G 4GB
Kingston 9965596-019.B01G 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
JUHOR JHD3000U1908JG 8GB
JUHOR JHD3000U1908JG 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Team Group Inc. TEAMGROUP-SD4-2666 16GB
Team Group Inc. TEAMGROUP-SD4-2666 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Micron Technology 16ATF2G64AZ-2G6H1 16GB
Micron Technology 16ATF2G64AZ-2G6H1 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CMH16GX4M2Z3600C18 8GB
Corsair CMH16GX4M2Z3600C18 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CMT64GX4M4K3600C16 16GB
Corsair CMT64GX4M4K3600C16 16GB
内存RAM
Kingston HP669238-071-HYC 4GB
Kingston HP669238-071-HYC 4GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston X3XCFP-HYA 8GB
Kingston X3XCFP-HYA 8GB
内存RAM