Samsung M393B5170FH0-CH9 4GB vs Kingston 9905702-006.A00G 8GB

总分

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分

Kingston 9905702-006.A00G 8GB

Kingston 9905702-006.A00G 8GB

差异规格评论

差异

Samsung M393B5170FH0-CH9 4GB

需要考虑的原因
Samsung M393B5170FH0-CH9 4GB

报告一个错误

Kingston 9905702-006.A00G 8GB

需要考虑的原因
Kingston 9905702-006.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 49

左右 -104% 更低的延时
更快的读取速度，GB/s

15.1 10

测试中的平均数值
更快的写入速度，GB/s

9.3 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CH9 4GB

Kingston 9905702-006.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 24
读取速度，GB/s

10.0 15.1
写入速度，GB/s

8.2 9.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2116 2499

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Wilk Elektronik S.A. GR3200S464L22S/8G 8GB

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G Skill Intl F4-2666C18-16GRS 16GB

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Crucial Technology CT8G4DFD8213.M16FA 8GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

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Corsair CMW32GX4M4C3000C15 8GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Corsair CMZ16GX3M2A2400C10 8GB

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ISD Technology Limited IM44GU48A30-GIIHM 4GB

ISD Technology Limited IM44GU48A30-GIIHM 4GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology CT8G4SFS632A 8GB

Crucial Technology CT8G4SFS632A 8GB