Samsung M393B5170FH0-CK0 4GB vs Crucial Technology CT16G4SFRA266.M16FRS 16GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Crucial Technology CT16G4SFRA266.M16FRS 16GB

Crucial Technology CT16G4SFRA266.M16FRS 16GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 29% 更低的延时

Crucial Technology CT16G4SFRA266.M16FRS 16GB

需要考虑的原因
Crucial Technology CT16G4SFRA266.M16FRS 16GB

报告一个错误

更快的读取速度，GB/s

14.1 11.8

测试中的平均数值
更快的写入速度，GB/s

8.8 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Crucial Technology CT16G4SFRA266.M16FRS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 38
读取速度，GB/s

11.8 14.1
写入速度，GB/s

7.3 8.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2057 2483

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2400C15-8GFXR 8GB

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Golden Empire CL14-16-16 D4-2400 16GB

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A-DATA Technology ADOVE1A0834E 1GB

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Crucial Technology BLT4G4D30AETA.K8FD 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Corsair CMK64GX4M4B3600C18 16GB

Corsair CMK64GX4M4B3600C18 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

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Gloway International Co. Ltd. TYA4U2666D19081C 8GB

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A-DATA Technology DQVE1908 512MB

Kingston KHX2666C15D4/4G 4GB

Kingston KHX2666C15D4/4G 4GB