Samsung M395T2863QZ4-CF76 1GB vs Samsung M474A4G43MB1-CTD 32GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Samsung M474A4G43MB1-CTD 32GB

Samsung M474A4G43MB1-CTD 32GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 19.7

测试中的平均数值
更快的写入速度，GB/s

2,404.5 14.8

测试中的平均数值

Samsung M474A4G43MB1-CTD 32GB

需要考虑的原因
Samsung M474A4G43MB1-CTD 32GB

报告一个错误

低于PassMark测试中的延时，ns

33 104

左右 -215% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Samsung M474A4G43MB1-CTD 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 33
读取速度，GB/s

3,192.0 19.7
写入速度，GB/s

2,404.5 14.8
内存带宽，mbps

6400 21300

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

no data 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

786 3671

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Corsair CMK32GX4M4B3200C14 8GB

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Crucial Technology CT16G4DFD824A.C16FE 16GB

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AMD R744G2400U1S 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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Heoriady HX2666DT8G-TD 8GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Apacer Technology 78.CAGP7.C7Z0B 8GB

Apacer Technology 78.CAGP7.C7Z0B 8GB

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Kingston 99U5403-036.A00G 4GB

Ramaxel Technology RMSA3320ME88HBF-3200 16GB

Ramaxel Technology RMSA3320ME88HBF-3200 16GB