Samsung M395T2863QZ4-CF76 1GB vs Solarflare Communications CT16G4DFD824A.C16FBR 16GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 14.3

测试中的平均数值

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

需要考虑的原因
Solarflare Communications CT16G4DFD824A.C16FBR 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 104

左右 -300% 更低的延时
更快的写入速度，GB/s

8.2 2,404.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 26
读取速度，GB/s

3,192.0 14.3
写入速度，GB/s

2,404.5 8.2
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 2633

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT2GC64B8HC0NS-CG 2GB

A-DATA Technology AO1P32NC8T1-BCIS 8GB

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Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

G Skill Intl F4-3600C17-4GTZ 4GB

G Skill Intl F4-3600C17-4GTZ 4GB

Panram International Corporation W4U3200PS-16G 16GB

Panram International Corporation W4U3200PS-16G 16GB

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G Skill Intl F4-2133C15-16GFX 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F4-3400C16-8GTZ 8GB

G Skill Intl F4-3400C16-8GTZ 8GB