Samsung M4 70T2864QZ3-CF7 1GB vs Corsair CMK16GX4M2K4266C16 8GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

Corsair CMK16GX4M2K4266C16 8GB

Corsair CMK16GX4M2K4266C16 8GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18.1

测试中的平均数值
更快的写入速度，GB/s

2,201.1 16.2

测试中的平均数值

Corsair CMK16GX4M2K4266C16 8GB

需要考虑的原因
Corsair CMK16GX4M2K4266C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 74

左右 -164% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

Corsair CMK16GX4M2K4266C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 28
读取速度，GB/s

4,178.4 18.1
写入速度，GB/s

2,201.1 16.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

508 3606

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kllisre HMA81GU6AFR8N-VK 8GB

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Crucial Technology BLE8G4D32BEEAK.K8FB 8GB

Crucial Technology BLE8G4D32BEEAK.K8FB 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMD16GX4M4B3600C18 4GB

Corsair CMD16GX4M4B3600C18 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston HP26D4U6D8ME-16X 16GB

Kingston HP26D4U6D8ME-16X 16GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Ramaxel Technology RMUA5110KE68H9F-2400 4GB

Ramaxel Technology RMUA5110KE68H9F-2400 4GB