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Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMK64GX4M2D3000C16 32GB
比较
Samsung M4 70T2953EZ3-CE6 1GB vs Corsair CMK64GX4M2D3000C16 32GB
总分
Samsung M4 70T2953EZ3-CE6 1GB
总分
Corsair CMK64GX4M2D3000C16 32GB
差异
规格
评论
差异
需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB
报告一个错误
更快的读取速度,GB/s
3
17.1
测试中的平均数值
需要考虑的原因
Corsair CMK64GX4M2D3000C16 32GB
报告一个错误
低于PassMark测试中的延时,ns
29
73
左右 -152% 更低的延时
更快的写入速度,GB/s
13.9
1,423.3
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMK64GX4M2D3000C16 32GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
73
29
读取速度,GB/s
3,510.5
17.1
写入速度,GB/s
1,423.3
13.9
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
476
3619
Samsung M4 70T2953EZ3-CE6 1GB RAM的比较
Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB
Corsair CMK64GX4M2D3000C16 32GB RAM的比较
Apacer Technology AQD-D4U8GN24-SE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMK64GX4M2D3000C16 32GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Patriot Memory (PDP Systems) PSD432G32002 32GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology 8G4US2400.M8B1 8GB
Kingston 99U5584-004.A00LF 4GB
Kingston 9965596-016.B01G 8GB
Samsung M471B5173QH0-YK0 4GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Kingston 9905670-012.A00G 8GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3200C16-4GTZ 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CB8GS2400.C8D 8GB
Samsung M393B2G70BH0-CH9 16GB
Cortus SAS 8ATF1G64AZ-2G6E1 8GB
Kingston 99U5428-063.A00LF 8GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
AMD AE34G2139U2 4GB
Samsung M393A4K40BB1-CRC 32GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666
报告一个错误
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Bug description
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