Samsung M4 70T5663CZ3-CE6 2GB vs Samsung M391A2K43BB1-CPB 16GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Samsung M391A2K43BB1-CPB 16GB

Samsung M391A2K43BB1-CPB 16GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 14.9

测试中的平均数值

Samsung M391A2K43BB1-CPB 16GB

需要考虑的原因
Samsung M391A2K43BB1-CPB 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 69

左右 -103% 更低的延时
更快的写入速度，GB/s

11.7 1,441.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M391A2K43BB1-CPB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 34
读取速度，GB/s

3,325.1 14.9
写入速度，GB/s

1,441.2 11.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

525 3075

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M391A2K43BB1-CPB 16GB

Samsung M391A2K43BB1-CPB 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Samsung M471A4G43BB1-CWE 32GB

Samsung M471A4G43BB1-CWE 32GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

G Skill Intl F4-2666C19-8GVR 8GB

G Skill Intl F4-2666C19-8GVR 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Patriot Memory (PDP Systems) PSD416G266681 16GB

Patriot Memory (PDP Systems) PSD416G266681 16GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

G Skill Intl F4-2800C18-16GRS 16GB

G Skill Intl F4-2800C18-16GRS 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Corsair CMD32GX4M4A2400C14 8GB

Corsair CMD32GX4M4A2400C14 8GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Kingston ACR26D4U9S8HJ-8 8GB

Kingston ACR26D4U9S8HJ-8 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT16G4SFD824A.C16FE 16GB

Crucial Technology CT16G4SFD824A.C16FE 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Corsair CMD32GX4M4B2133C10 8GB

Corsair CMD32GX4M4B2133C10 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

G Skill Intl F4-4400C19-8GTZSW 8GB

G Skill Intl F4-4400C19-8GTZSW 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-3200C16-8GTRG 8GB

G Skill Intl F4-3200C16-8GTRG 8GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Kingmax Semiconductor GLLH22F-18---------- 16GB

Kingmax Semiconductor GLLH22F-18---------- 16GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB