Samsung M4 70T5663RZ3-CF7 2GB vs Apacer Technology 78.C2GFA.AF30B 8GB

总分

Samsung M4 70T5663RZ3-CF7 2GB

Samsung M4 70T5663RZ3-CF7 2GB

总分

Apacer Technology 78.C2GFA.AF30B 8GB

Apacer Technology 78.C2GFA.AF30B 8GB

差异规格评论

差异

Samsung M4 70T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M4 70T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 14.8

测试中的平均数值

Apacer Technology 78.C2GFA.AF30B 8GB

需要考虑的原因
Apacer Technology 78.C2GFA.AF30B 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 61

左右 -135% 更低的延时
更快的写入速度，GB/s

12.2 1,903.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663RZ3-CF7 2GB

Apacer Technology 78.C2GFA.AF30B 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 26
读取速度，GB/s

4,668.9 14.8
写入速度，GB/s

1,903.1 12.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

735 2576

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T5663RZ3-CF7 2GB

Samsung M4 70T5663RZ3-CF7 2GB

Apacer Technology 78.C2GFA.AF30B 8GB

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G Skill Intl F4-4000C14-16GTZR 16GB

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Corsair CMK64GX4M8B2800C14 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

A-DATA Technology DOVF1B163G2G 2GB

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Kingston 9905700-072.A01G 16GB

Kingston 9905700-072.A01G 16GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

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G Skill Intl F4-3600C19-8GSXK 8GB

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Nanya Technology M2Y1G64TU8HB0B-25C 1GB

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Kingmax Semiconductor GSJF62F-DA---------- 4GB