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Samsung M471A1G44AB0-CWE 8GB
Corsair CMD8GX4M2B3600C18 4GB

Samsung M471A1G44AB0-CWE 8GB vs Corsair CMD8GX4M2B3600C18 4GB

总分
star star star star star
Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

总分
star star star star star
Corsair CMD8GX4M2B3600C18 4GB

Corsair CMD8GX4M2B3600C18 4GB

差异 规格 评论

差异

Samsung M471A1G44AB0-CWE 8GB 需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
Corsair CMD8GX4M2B3600C18 4GB 需要考虑的原因
Corsair CMD8GX4M2B3600C18 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 50
    左右 -127% 更低的延时
  • 更快的读取速度，GB/s
    18.1 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.4 left arrow 10.9
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A1G44AB0-CWE 8GB
Corsair CMD8GX4M2B3600C18 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 22
  • 读取速度，GB/s
    15.3 left arrow 18.1
  • 写入速度，GB/s
    10.9 left arrow 14.4
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2512 left arrow 3010

Samsung M471A1G44AB0-CWE 8GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMD8GX4M2B3600C18 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston KY7N41-MIE 8GB
Kingston KY7N41-MIE 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Panram International Corporation W4U2666PS-8GC19 8GB
Panram International Corporation W4U2666PS-8GC19 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology CT4G4DFS8266.C8FG 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMW32GX4M4Z2933C16 8GB
Corsair CMW32GX4M4Z2933C16 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Kingston 99U5704-001.A00G 4GB
Kingston 99U5704-001.A00G 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3200C16-8GTZKO 8GB
G Skill Intl F4-3200C16-8GTZKO 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston 9905713-035.A00G 8GB
Kingston 9905713-035.A00G 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMWX16GC3000C15W4 16GB
Corsair CMWX16GC3000C15W4 16GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Corsair CMK32GX4M4B3000C15 8GB
Corsair CMK32GX4M4B3000C15 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C16-16GTRSC 16GB
G Skill Intl F4-3600C16-16GTRSC 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston MSI24D4U7D8MH-16 16GB
Kingston MSI24D4U7D8MH-16 16GB
内存RAM