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Samsung M471A5244BB0-CRC 4GB
Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244BB0-CRC 4GB vs Samsung M471A5244CB0-CRC 4GB

总分
star star star star star
Samsung M471A5244BB0-CRC 4GB

Samsung M471A5244BB0-CRC 4GB

总分
star star star star star
Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244CB0-CRC 4GB

差异 规格 评论

差异

Samsung M471A5244BB0-CRC 4GB 需要考虑的原因
Samsung M471A5244BB0-CRC 4GB
报告一个错误
Samsung M471A5244CB0-CRC 4GB 需要考虑的原因
Samsung M471A5244CB0-CRC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 38
    左右 -3% 更低的延时
  • 更快的读取速度，GB/s
    14.4 left arrow 14
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A5244BB0-CRC 4GB
Samsung M471A5244CB0-CRC 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 37
  • 读取速度，GB/s
    14.0 left arrow 14.4
  • 写入速度，GB/s
    10.4 left arrow 10.4
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2055 left arrow 2179

Samsung M471A5244BB0-CRC 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M471A5244CB0-CRC 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471A5244BB0-CRC 4GB
Samsung M471A5244BB0-CRC 4GB
Samsung M471A5244CB0-CRC 4GB
Samsung M471A5244CB0-CRC 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-2400C15-4GNT 4GB
G Skill Intl F4-2400C15-4GNT 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
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Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
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Kingston 9905702-071.A00G 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
G Skill Intl F4-3000C16-16GISB 16GB
G Skill Intl F4-3000C16-16GISB 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3400C16-16GTZ 16GB
G Skill Intl F4-3400C16-16GTZ 16GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
Corsair CMW32GX4M2A2666C16 16GB
Corsair CMW32GX4M2A2666C16 16GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Golden Empire CL16-16-16 D4-2400 8GB
Golden Empire CL16-16-16 D4-2400 8GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
EVGA 8GX-D4-3200-MR 8GB
EVGA 8GX-D4-3200-MR 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Panram International Corporation PUD42400C168GVS 8GB
Panram International Corporation PUD42400C168GVS 8GB
内存RAM
Smart Modular SH564128FH8N0QHSCG 4GB
Smart Modular SH564128FH8N0QHSCG 4GB
Smart Modular SF4641G8CK8IEGKSBG 8GB
Smart Modular SF4641G8CK8IEGKSBG 8GB
内存RAM