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Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-2400C15-8GFXR 8GB
比较
Samsung M471A5244CB0-CWE 4GB vs G Skill Intl F4-2400C15-8GFXR 8GB
总分
Samsung M471A5244CB0-CWE 4GB
总分
G Skill Intl F4-2400C15-8GFXR 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
更高的内存带宽,mbps
25600
19200
左右 1.33% 更高的带宽
需要考虑的原因
G Skill Intl F4-2400C15-8GFXR 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
38
左右 -41% 更低的延时
更快的读取速度,GB/s
17.8
15.5
测试中的平均数值
更快的写入速度,GB/s
13.2
12.0
测试中的平均数值
规格
完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-2400C15-8GFXR 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
38
27
读取速度,GB/s
15.5
17.8
写入速度,GB/s
12.0
13.2
内存带宽,mbps
25600
19200
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-19200, 1.2V, CAS Supported: 9 11 13 14 15
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2283
3337
Samsung M471A5244CB0-CWE 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C15-8GFXR 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston KHX2666C16/16G 16GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT16G4DFRA32A.C16FP 16GB
Samsung M3 78T5663RZ3-CF7 2GB
Corsair CMK32GX4M4C3000C16 8GB
Kingston 99U5469-045.A00LF 4GB
Kingston HP26D4S9S8MD-8 8GB
Kingston K1N7HK-ELC 2GB
Kingston 9965600-005.A01G 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Hyundai Inc AR36C18S8K2HU416R 8GB
SK Hynix HYMP512U64CP8-Y5 1GB
Kingston ASU21D4U5S8MB-8 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
Crucial Technology BL16G26C16U4B.16FD 16GB
G Skill Intl F2-5300CL4-1GBSA 1GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
SK Hynix HMA41GR7AFR8N-UH 8GB
Samsung M378A1K43EB2-CWE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Kingston 9905403-090.A01LF 4GB
Crucial Technology BL8G30C15U4B.8FE 8GB
报告一个错误
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Bug description
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